Provided is a VCSEL that includes a lower DBR of a first conductivity type, an active region, and an upper DBR of a second conductivity type, on a substrate. The lower DBR has a first to-be-oxidized Al-containing layer located farther from the active region than a second to-be-oxidized layer that is formed in the upper DBR. Both layers have an oxidized region and a first or a second non-oxidized region surrounded by the oxidized region. The first non-oxidized region is larger than the maximum size of the second non-oxidized region for a single mode oscillation, and smaller than the maximum size of the first non-oxidized region for a single mode oscillation. The second non-oxidized region is larger than the maximum size of the second non-oxidized region for a single mode oscillation. The first non-oxidized region has a size equal to or larger than that of the second non-oxidized region.