Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12241722Application Date: 2008-09-30
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Publication No.: US07925944B2Publication Date: 2011-04-12
- Inventor: Masaya Hirose , Takeshi Yamamoto , Kinya Daio , Kenji Watanabe
- Applicant: Masaya Hirose , Takeshi Yamamoto , Kinya Daio , Kenji Watanabe
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2007-327872 20071219
- Main IPC: G01R31/28
- IPC: G01R31/28

Abstract:
In a semiconductor device including an N-line M-stage shift register circuit operated at high speed of, for example, several hundreds MHz. Input circuits input a common test pattern to each of pairs of shift registers in, for example, two lines out of the N lines. A plurality of outputs of the pairs of shift registers in the two lines are compared in comparators, and the comparison results are output. The N-line M-stage shift register circuit and the comparators are operated in synchronization with a clock signal at several hundreds MHz. Hence, even when the circuit scale (area) of the N-line M-stage shift register circuit is increased to involve apparent wiring delay, a defect in the shift register circuit can be detected at an actual speed.
Public/Granted literature
- US20090161813A1 SEMICONDUCTOR DEVICE Public/Granted day:2009-06-25
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