Invention Grant
- Patent Title: Semiconductor pressure sensor and data processing device
- Patent Title (中): 半导体压力传感器和数据处理装置
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Application No.: US12343236Application Date: 2008-12-23
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Publication No.: US07926352B2Publication Date: 2011-04-19
- Inventor: Tadashi Matsushima , Masaru Sugai , Chung Wen Hung , Yuji Shimizu
- Applicant: Tadashi Matsushima , Masaru Sugai , Chung Wen Hung , Yuji Shimizu
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2007-333578 20071226
- Main IPC: G01L9/00
- IPC: G01L9/00

Abstract:
For example, to adjust an offset of a pressure sensor, there are provided an external resistor RE and an internal resistor circuit that is connected to both ends of RE and formed in a semiconductor chip such as a processor. The internal resistor circuit includes N pieces of internal resistors RI connected in series between both ends of RE, and (N+1) pieces of switches selecting one of voltages of respective nodes of the serial resistors and outputs the same as a signal. RE has a high absolute value precision of, e.g., several ten ohms to several hundred ohms, and RI has a high relative value precision of, e.g., several kilo-ohms. Therefore, an offset adjustment range is decided at a high absolute value precision mainly by RE, and with regard to the arrangement resolution, a high precision can be obtained along with the relative value precision of the RI.
Public/Granted literature
- US20090165564A1 SEMICONDUCTOR PRESSURE SENSOR AND DATA PROCESSING DEVICE Public/Granted day:2009-07-02
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