Invention Grant
- Patent Title: Semiconductor pressure sensor and method of producing the same
- Patent Title (中): 半导体压力传感器及其制造方法
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Application No.: US12542921Application Date: 2009-08-18
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Publication No.: US07926354B2Publication Date: 2011-04-19
- Inventor: Kimitoshi Sato
- Applicant: Kimitoshi Sato
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-071450 20090324
- Main IPC: G01L9/06
- IPC: G01L9/06

Abstract:
A diaphragm made of a polysilicon film is provided above a first main surface of a silicon substrate. Four gauge resistors are provided on the top face of the diaphragm. A through hole for exposing the bottom face of the diaphragm is formed in the silicon substrate. An anchor portion for mounting the diaphragm on the silicon substrate is provided between the diaphragm and the silicon substrate in a manner surrounding circumferentially an opening end of the through hole located at the side facing the first main surface. Accordingly, a semiconductor pressure sensor having a diaphragm of reduced and less varied thickness can be obtained.
Public/Granted literature
- US20100242618A1 SEMICONDUCTOR PRESSURE SENSOR AND METHOD OF PRODUCING THE SAME Public/Granted day:2010-09-30
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