Disclosed herein is a process for producing a film, coating or powder employing a metallocene or metallocene-like precursor having the general formula CpMCp′, where M is a metal selected from the group consisting of Ru, Os and Fe; Cp is a first substituted cyclopentadienyl or cyclopentadienyl-like, e.g., indenyl, moiety that includes at least one substituent group D1, where D1 is X; Ca1Hb1Xc1; Ca2Hb2Xc2(C═O)Ca1Hb1Xc1; Ca2Hb2Xc2OCa1Hb1Xc1; Ca2Hb2Xc2(C═O)OCa1Hb1Xc1; or Ca2Hb2Xc2O(C═O)Ca1Hb1Xc1; and Cp′ is a second substituted cyclopentadienyl or cyclopentadienyl-like, e.g., indenyl, moiety that includes at least one substituent group D1′, where D1′ is X; Ca1Hb1Xc1; Ca2Hb2Xc2(C═O)Ca1Hb1Xc1; Ca2Hb2Xc2OCa1Hb1Xc1; Ca2Hb2Xc2(C═O)OCa1Hb1Xc1; or Ca2Hb2Xc2O(C═O)Ca1Hb1Xc1. D1 and D1′ are different from one another. X is a halogen atom or NO2; a1 is an integer between 1 to 8; b1 is an integer between 0 and 2(a1)+1−c1; c1 is an integer between 0 and 2(a1)+1−b1; b1+c1 is at least 1; a2 is an integer between 0 and 8; b2 is an integer between 0 and 2(a2)+1−c2; and c2 is an integer between 0 and 2(a2)+1−b2. The process can be used in manufacturing or processing electronic devices.