Invention Grant
- Patent Title: Method of forming a sputtering target
- Patent Title (中): 形成溅射靶的方法
-
Application No.: US12801383Application Date: 2010-06-07
-
Publication No.: US07927912B2Publication Date: 2011-04-19
- Inventor: Daniel R. Juliano , Deborah Mathias , Neil M. Mackie
- Applicant: Daniel R. Juliano , Deborah Mathias , Neil M. Mackie
- Applicant Address: US CA Santa Clara
- Assignee: MiaSole
- Current Assignee: MiaSole
- Current Assignee Address: US CA Santa Clara
- Agency: The Marbury Law Group, PLLC
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell. The sputtering layer directly contacts the second material.
Public/Granted literature
- US20100310783A1 Barrier for doped molybdenum targets Public/Granted day:2010-12-09
Information query
IPC分类:
