Invention Grant
- Patent Title: Low resistivity silicon carbide
- Patent Title (中): 低电阻率碳化硅
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Application No.: US10872746Application Date: 2004-06-21
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Publication No.: US07927915B2Publication Date: 2011-04-19
- Inventor: Jitendra S. Goela , Michael A. Pickering
- Applicant: Jitendra S. Goela , Michael A. Pickering
- Applicant Address: US PA Philadelphia
- Assignee: Rohm and Haas Company
- Current Assignee: Rohm and Haas Company
- Current Assignee Address: US PA Philadelphia
- Agent John J. Piskorski
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
An opaque, low resistivity silicon carbide and a method of making the opaque, low resistivity silicon carbide. The opaque, low resistivity silicon carbide is doped with a sufficient amount of nitrogen to provide the desired properties of the silicon carbide. The opaque, low resistivity silicon carbide is a free-standing bulk material that may be machined to form furniture used for holding semi-conductor wafers during processing of the wafers. The opaque, low resistivity silicon carbide is opaque at wavelengths of light where semi-conductor wafers are processed. Such opaqueness provides for improved semi-conductor wafer manufacturing. Edge rings fashioned from the opaque, low resistivity silicon carbide can be employed in RTP chambers.
Public/Granted literature
- US20040229395A1 Low resistivity silicon carbide Public/Granted day:2004-11-18
Information query
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