Invention Grant
- Patent Title: Fabrication of large grain polycrystalline silicon film by nano aluminum-induced crystallization of amorphous silicon
- Patent Title (中): 通过纳米铝诱导非晶硅结晶制备大晶粒多晶硅膜
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Application No.: US12703636Application Date: 2010-02-10
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Publication No.: US07927937B2Publication Date: 2011-04-19
- Inventor: Min Zou , Li Cai , William David Brown
- Applicant: Min Zou , Li Cai , William David Brown
- Applicant Address: US AR Little Rock
- Assignee: Board of Trustees of the University of Arkansas
- Current Assignee: Board of Trustees of the University of Arkansas
- Current Assignee Address: US AR Little Rock
- Agency: Morris Manning Martin LLP
- Agent Tim Tingkang Xia, Esq.; Christopher W. Glass, Esq
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
One aspect of the present invention relates to a method for fabricating a polycrystalline silicon film. In one embodiment, the method includes the steps of providing a substrate having a thermally-grown silicon dioxide layer, forming an amorphous silicon film on the thermally-grown silicon dioxide layer of the substrate, forming an aluminum layer on the amorphous silicon film to form a structure having the substrate, the amorphous silicon film and the aluminum layer, and annealing the structure at an annealing temperature for a period of time in an N2 environment with a ramp-up time to crystallize the amorphous silicon film to form a polycrystalline silicon film.
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