Invention Grant
- Patent Title: Semiconductor memory device and method of manufacturing the same
- Patent Title (中): 半导体存储器件及其制造方法
-
Application No.: US12755532Application Date: 2010-04-07
-
Publication No.: US07927949B2Publication Date: 2011-04-19
- Inventor: Yoshio Ozawa , Isao Kamioka , Junichi Shiozawa , Akihito Yamamoto , Ryota Fujitsuka , Yoshihiro Ogawa , Katsuaki Natori , Katsuyuki Sekine , Masayuki Tanaka , Daisuke Nishida
- Applicant: Yoshio Ozawa , Isao Kamioka , Junichi Shiozawa , Akihito Yamamoto , Ryota Fujitsuka , Yoshihiro Ogawa , Katsuaki Natori , Katsuyuki Sekine , Masayuki Tanaka , Daisuke Nishida
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2005-128232 20050426
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/8238 ; H01L21/3205 ; H01L21/4763
Abstract:
A semiconductor memory device manufacturing method includes forming a floating gate electrode above a semiconductor substrate, forming an interelectrode insulating film above the floating gate electrode, forming a first radical nitride film on a surface of the interelectrode insulating film by first radical nitriding, and forming a control gate electrode on the first radical nitride film.
Public/Granted literature
- US20100197130A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2010-08-05
Information query
IPC分类:
