Invention Grant
- Patent Title: Method for producing bonded wafer
- Patent Title (中): 接合晶片的制造方法
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Application No.: US12384819Application Date: 2009-04-09
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Publication No.: US07927972B2Publication Date: 2011-04-19
- Inventor: Akihiko Endo , Tatsumi Kusaba
- Applicant: Akihiko Endo , Tatsumi Kusaba
- Applicant Address: JP Tokyo
- Assignee: Sumco Corporation
- Current Assignee: Sumco Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2008-103062 20080411
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/46
Abstract:
Even if an oxygen ion implanted layer in a wafer for active layer is not a completely continuous SiO2 layer but a layer mixed partially with Si or SiOx, it is removed by here is provided a method for producing a bonded wafer in which it is possible to remove an oxygen ion implanted layer effectively as it is by repetitive treatment with an oxidizing solution and HF solution at a step of removing the oxygen ion implanted layer in a bonded wafer.
Public/Granted literature
- US20090258475A1 Method for producing bonded wafer Public/Granted day:2009-10-15
Information query
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