Invention Grant
- Patent Title: Laser irradiation method, laser irradiation apparatus, and method of manufacturing a semiconductor device
- Patent Title (中): 激光照射方法，激光照射装置以及半导体装置的制造方法
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Application No.: US10896007Application Date: 2004-07-22
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Publication No.: US07927983B2Publication Date: 2011-04-19
- Inventor: Koichiro Tanaka , Tomoaki Moriwaka
- Applicant: Koichiro Tanaka , Tomoaki Moriwaka
- Applicant Address: JP Kanagawa-Ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-Ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2001-264561 20010831
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
Attenuation regions of laser light are removed or reduced in size using a slit located in the immediate vicinity of a surface to be irradiated so that a steep energy distribution is obtained in the end portions of the laser light. The reason why the slit is located in the immediate vicinity of the surface to be irradiated is to suppress the spread of the laser light. In addition, the attenuation regions of the laser light are folded by using a mirror instead of the slit to increase energy densities in the attenuation regions by one another so that a steep energy density distribution is obtained in the end portions of the laser light.
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