Methods and devices for preventing channeling of dopants during ion implantation are provided. The method includes providing a semiconductor substrate and depositing a sacrificial scattering layer over at least a portion a surface of the substrate, wherein the sacrificial scattering layer includes an amorphous material. The method further includes ion implanting a dopant through the sacrificial scattering layer to within a depth profile in the substrate. Subsequently, the sacrificial scattering layer can be removed such that erosion of the substrate surface is less than one percent of a thickness of the sacrificial scattering layer.