Methods of forming transparent conducting oxides and devices formed by these methods are shown. Monolayers that contain tungsten and monolayers that contain indium are deposited onto a substrate and subsequently processed to form tungsten-doped indium oxide. The resulting transparent conducing oxide includes properties such as an amorphous or nanocrystalline microstructure. Devices that include transparent conducing oxides formed with these methods have better step coverage over substrate topography and more robust film mechanical properties.