Invention Grant
- Patent Title: Plasma processing method and method for manufacturing an electronic device
- Patent Title (中): 等离子体处理方法及其制造方法
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Application No.: US10594895Application Date: 2005-03-31
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Publication No.: US07928018B2Publication Date: 2011-04-19
- Inventor: Tadahiro Ohmi , Akinobu Teramoto , Hiroshi Yamauchi , Yukio Hayakawa
- Applicant: Tadahiro Ohmi , Akinobu Teramoto , Hiroshi Yamauchi , Yukio Hayakawa
- Applicant Address: JP Tsukuba-shi, Ibaraki
- Assignee: Foundation for Advancement of International Science
- Current Assignee: Foundation for Advancement of International Science
- Current Assignee Address: JP Tsukuba-shi, Ibaraki
- Agency: Foley & Lardner LLP
- Priority: JP2004-104237 20040331
- International Application: PCT/JP2005/006259 WO 20050331
- International Announcement: WO2005/096363 WO 20051013
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469 ; H01L21/02 ; C23C16/00

Abstract:
The application of oxynitriding treatment to electronic appliances involve the problem that N2 ions are formed to thereby damage any oxynitride film. It is intended to provide a method of plasma treatment capable of realizing high-quality oxynitriding and to provide a process for producing an electronic appliance in which use is made of the method of plasma treatment. There is provided a method of plasma treatment, comprising generating plasma with a gas for plasma excitation and introducing a treating gas in the plasma to thereby treat a treatment subject, wherein the treating gas contains nitrous oxide gas, this nitrous oxide gas introduced in a plasma of
Public/Granted literature
- US20080268657A1 Plasma Processing Method and Method for Manufacturing an Electronic Device Public/Granted day:2008-10-30
Information query
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