Invention Grant
- Patent Title: Infrared detection sensor and method of fabricating the same
- Patent Title (中): 红外线检测传感器及其制造方法
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Application No.: US12648161Application Date: 2009-12-28
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Publication No.: US07928388B2Publication Date: 2011-04-19
- Inventor: Seong Mok Cho , Ho Jun Ryu , Woo Seok Yang , Sang Hoon Cheon , Chang Auck Choi
- Applicant: Seong Mok Cho , Ho Jun Ryu , Woo Seok Yang , Sang Hoon Cheon , Chang Auck Choi
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Priority: KR10-2009-0077760 20090821
- Main IPC: G01J5/00
- IPC: G01J5/00
Abstract:
In an infrared detection sensor according to the present invention, all material constituting an upper portion of a sensing electrode in a supporting arm region is removed so that a supporting arm has low thermal conductivity. As a result, thermal conductivity of the infrared sensor structure is reduced, and the infrared detection sensor has excellent sensitivity.
Public/Granted literature
- US20110042569A1 INFRARED DETECTION SENSOR AND METHOD OF FABRICATING THE SAME Public/Granted day:2011-02-24
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