Invention Grant
- Patent Title: Charged particle beam writing apparatus and charged particle beam writing method
- Patent Title (中): 带电粒子束写入装置和带电粒子束写入方法
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Application No.: US12042865Application Date: 2008-03-05
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Publication No.: US07928414B2Publication Date: 2011-04-19
- Inventor: Takayuki Abe
- Applicant: Takayuki Abe
- Applicant Address: JP Numazu-shi
- Assignee: NuFlare Technology, Inc.
- Current Assignee: NuFlare Technology, Inc.
- Current Assignee Address: JP Numazu-shi
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-060826 20070309
- Main IPC: H01J37/304
- IPC: H01J37/304

Abstract:
A charged particle beam writing apparatus includes an irradiation part configured to irradiate a charged particle beam; a first shaping aperture member having passing areas, that the charged particle beam passes through, on both sides of an area blocking the charged particle beam; a deflection part configured to deflect the charged particle beam that has passed through the first shaping aperture member; a second shaping aperture member having passing areas, that the charged particle beam passes through, on both sides of an area blocking the deflected charged particle beam; and a stage on which a target workpiece irradiated with the charged particle beam that has passed through the second shaping aperture member is placed.
Public/Granted literature
- US20080217554A1 CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD Public/Granted day:2008-09-11
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