Invention Grant
- Patent Title: Member for semiconductor light emitting device and method for manufacturing such member, and semiconductor light emitting device using such member
- Patent Title (中): 半导体发光元件用构件及其制造方法以及使用该构件的半导体发光元件
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Application No.: US12067859Application Date: 2006-09-22
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Publication No.: US07928457B2Publication Date: 2011-04-19
- Inventor: Hanako Kato , Yutaka Mori , Hiroshi Kobayashi , Tsubasa Tomura , Masanori Yamazaki , Mari Abe
- Applicant: Hanako Kato , Yutaka Mori , Hiroshi Kobayashi , Tsubasa Tomura , Masanori Yamazaki , Mari Abe
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Chemical Corporation
- Current Assignee: Mitsubishi Chemical Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2005-276756 20050922
- International Application: PCT/JP2006/318868 WO 20060922
- International Announcement: WO2007/034919 WO 20070329
- Main IPC: H01L29/10
- IPC: H01L29/10

Abstract:
To provide novel semiconductor light-emitting device member superior in transparency, light resistance, and heat resistance and capable of sealing semiconductor light-emitting device and holding phosphor without generating cracks or peelings even after use for a long time, the member meets the following requirements: (1) comprising functional group forming hydrogen bond with hydroxyl group or oxygen in a metalloxane bond, on the surface of ceramic or metal, (2) maintenance rate of transmittance at 400 nm wavelength before and after left at 200° C. for 500 hours is between 80% to 110%, (3) no change is observed by visual inspection after irradiated with light having 380 nm to 500 nm wavelength, whose center wavelength is between 400 nm and 450 nm both inclusive, for 24 hours with 4500 W/m2 illumination intensity at 436 nm wavelength, and (4) refractive index at 550 nm wavelength is 1.45 or larger.
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