Invention Grant
- Patent Title: Light emitting element and manufacturing method thereof
- Patent Title (中): 发光元件及其制造方法
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Application No.: US12314214Application Date: 2008-12-05
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Publication No.: US07928460B2Publication Date: 2011-04-19
- Inventor: Toshiyuki Kawakami , Yoshinobu Kawaguchi , Takeshi Kamikawa
- Applicant: Toshiyuki Kawakami , Yoshinobu Kawaguchi , Takeshi Kamikawa
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2007-316006 20071206
- Main IPC: H01L33/10
- IPC: H01L33/10 ; H01L33/16
Abstract:
In a laser chip 1 using a nitride semiconductor having a hexagonal crystal structure, the −c plane is used as a first resonator facet A, which is the side of the laser chip 1 through which light is emitted. On the first resonator facet A, that is, on the −c plane, a facet protection film 14 is formed. This ensures firm joint between the first resonator facet A and the facet protection film 14 and alleviates deterioration of the first resonator facet A.
Public/Granted literature
- US20090200573A1 Light emitting element and manufacturing method thereof Public/Granted day:2009-08-13
Information query
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