Invention Grant
US07928471B2 Group III-nitride growth on silicon or silicon germanium substrates and method and devices therefor
有权
硅或硅锗衬底上的III族氮化物生长及其方法和装置
- Patent Title: Group III-nitride growth on silicon or silicon germanium substrates and method and devices therefor
- Patent Title (中): 硅或硅锗衬底上的III族氮化物生长及其方法和装置
-
Application No.: US11566288Application Date: 2006-12-04
-
Publication No.: US07928471B2Publication Date: 2011-04-19
- Inventor: Michael A. Mastro , Charles R. Eddy, Jr. , Shahzad Akbar
- Applicant: Michael A. Mastro , Charles R. Eddy, Jr. , Shahzad Akbar
- Applicant Address: US DC Washington
- Assignee: The United States of America as represented by the Secretary of the Navy
- Current Assignee: The United States of America as represented by the Secretary of the Navy
- Current Assignee Address: US DC Washington
- Agent Amy L Ressing; Joseph T. Grunkemeyer
- Main IPC: H01L31/102
- IPC: H01L31/102 ; H01L33/00 ; H01S5/00
Abstract:
A structure including a Si1-xGex substrate and a distributed Bragg reflector layer disposed directly onto the substrate. The distributed Bragg reflector layer includes a repeating pattern that includes at least one aluminum nitride layer and a second layer having the general formula AlyGa1-yN. Another aspect of the present invention is various devices including this structure. Another aspect of the present invention is directed to a method of forming such a structure comprising providing a Si1-xGex substrate and depositing a distributed Bragg reflector layer directly onto the substrate. Another aspect of the present invention is directed to a photodetector or photovoltaic cell device, including a Si1-xGex substrate device, a group III-nitride device and contacts to provide a conductive path for a current generated across at least one of the Si1-xGex substrate device and the group III-nitride device upon incident light.
Public/Granted literature
- US20080128745A1 GROUP III-NITRIDE GROWTH ON SILICON OR SILICON GERMANIUM SUBSTRATES AND METHOD AND DEVICES THEREFOR Public/Granted day:2008-06-05
Information query
IPC分类:
