Invention Grant
- Patent Title: Forming embedded dielectric layers adjacent to sidewalls of shallow trench isolation regions
- Patent Title (中): 形成与浅沟槽隔离区域的侧壁相邻的嵌入电介质层
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Application No.: US11839352Application Date: 2007-08-15
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Publication No.: US07928474B2Publication Date: 2011-04-19
- Inventor: Hong-Nien Lin , Chih-Hsin Ko , Wen-Chin Lee
- Applicant: Hong-Nien Lin , Chih-Hsin Ko , Wen-Chin Lee
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.,
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.,
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A semiconductor structure is provided. The semiconductor structure includes a semiconductor substrate; an insulating region extending from substantially a top surface of the semiconductor substrate into the semiconductor substrate; an embedded dielectric spacer adjacent the insulating region, wherein a bottom of the embedded dielectric spacer adjoins the semiconductor substrate; and a semiconductor material adjoining a top edge and extending on a sidewall of the embedded dielectric spacer.
Public/Granted literature
- US20090045411A1 Forming Embedded Dielectric Layers Adjacent to Sidewalls of Shallow Trench Isolation Regions Public/Granted day:2009-02-19
Information query
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