Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12274804Application Date: 2008-11-20
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Publication No.: US07928476B2Publication Date: 2011-04-19
- Inventor: Hiroshi Kudo , Nobuyuki Ohtsuka , Masaki Haneda , Tamotsu Owada
- Applicant: Hiroshi Kudo , Nobuyuki Ohtsuka , Masaki Haneda , Tamotsu Owada
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2007-314729 20071205
- Main IPC: H01L23/52
- IPC: H01L23/52
Abstract:
A semiconductor device has a first insulating film formed over a semiconductor substrate, a first opening formed in the first insulating film, a first manganese oxide film formed along an inner wall of the first opening, a first copper wiring embedded in the first opening, and a second manganese oxide film formed on the first copper wiring including carbon.
Public/Granted literature
- US20090146309A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2009-06-11
Information query
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