Invention Grant
US07928493B2 Nonvolatile memory device with multiple blocking layers and method of fabricating the same
有权
具有多个阻挡层的非易失性存储器件及其制造方法
- Patent Title: Nonvolatile memory device with multiple blocking layers and method of fabricating the same
- Patent Title (中): 具有多个阻挡层的非易失性存储器件及其制造方法
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Application No.: US12430481Application Date: 2009-04-27
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Publication No.: US07928493B2Publication Date: 2011-04-19
- Inventor: Heung-Jae Cho , Moon-Sig Joo , Yong-Soo Kim , Won-Joon Choi
- Applicant: Heung-Jae Cho , Moon-Sig Joo , Yong-Soo Kim , Won-Joon Choi
- Applicant Address: KR Icheon-si, Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si, Gyeonggi-do
- Agency: Lowe Hauptman Ham & Berner LLP
- Priority: KR10-2008-0040832 20080430
- Main IPC: H01L29/788
- IPC: H01L29/788
Abstract:
A nonvolatile memory device with a blocking layer controlling the transfer of electric charges in a charge storage layer includes the blocking layer having a first blocking layer in contact with the charge storage layer and a second blocking layer over the first blocking layer, wherein the first blocking layer has a greater energy band gap than the second blocking layer and the second blocking layer has a greater permittivity than the first blocking layer.
Public/Granted literature
- US20090273018A1 NONVOLATILE MEMORY DEVICE WITH MULTIPLE BLOCKING LAYERS AND METHOD OF FABRICATING THE SAME Public/Granted day:2009-11-05
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