Invention Grant
- Patent Title: Magnetoresistive element
- Patent Title (中): 磁阻元件
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Application No.: US12385119Application Date: 2009-03-31
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Publication No.: US07928524B2Publication Date: 2011-04-19
- Inventor: Kee-won Kim
- Applicant: Kee-won Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2008-0042459 20080507
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/00
Abstract:
A magnetoresistive element is disclosed, wherein the magnetoresistive element is composed of a synthetic anti-ferromagnetic (SAF) structure that may include a first pinned layer, an intermediate layer, and a second pinned layer; and a Cr layer between the first pinned layer and the intermediate layer and/or the second pinned layer and the intermediate layer.
Public/Granted literature
- US20090278218A1 Magnetoresistive element Public/Granted day:2009-11-12
Information query
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