Invention Grant
US07928536B2 Roughness reducing film at interface, materials for forming roughness reducing film at interface, wiring layer and semiconductor device using the same, and method for manufacturing semiconductor device
有权
界面处的粗糙度降低膜，用于在界面处形成粗糙度降低膜的材料，布线层和使用其的半导体器件，以及用于制造半导体器件的方法
- Patent Title: Roughness reducing film at interface, materials for forming roughness reducing film at interface, wiring layer and semiconductor device using the same, and method for manufacturing semiconductor device
- Patent Title (中): 界面处的粗糙度降低膜，用于在界面处形成粗糙度降低膜的材料，布线层和使用其的半导体器件，以及用于制造半导体器件的方法
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Application No.: US11727001Application Date: 2007-03-23
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Publication No.: US07928536B2Publication Date: 2011-04-19
- Inventor: Tadahiro Imada , Yoshihiro Nakata , Ei Yano
- Applicant: Tadahiro Imada , Yoshihiro Nakata , Ei Yano
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2006-091549 20060329; JP2006-349409 20061226
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
Techniques for obtaining a wiring layer with a high TDDB resistance and little leakage current, and accordingly, for manufacturing a highly reliable semiconductor device with a small electric power consumption are provided, in which an interfacial roughness reducing film is formed which is in contact with an insulator film and also in contact with a wiring line on the other side surface thereof, and has an interfacial roughness between the wiring line and the interfacial roughness reducing film smaller than that between the insulator film and the interfacial roughness reducing film.
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