Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US12018245Application Date: 2008-01-23
-
Publication No.: US07928539B2Publication Date: 2011-04-19
- Inventor: Yasutaka Nakashiba
- Applicant: Yasutaka Nakashiba
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2007-18239 20070129
- Main IPC: H01L23/52
- IPC: H01L23/52
Abstract:
A semiconductor device (1) includes a wiring (10) and dummy conductor patterns (20). The wiring (10) is a wiring through which a current with a frequency of 5 GHz or higher flows. Near the wiring (10), the dummy conductor patterns (20) are formed. A planar shape of each of the dummy conductor patterns (20) is equivalent to a shape with an internal angle larger than 180°.
Public/Granted literature
- US20080179719A1 SEMICONDUCTOR DEVICE Public/Granted day:2008-07-31
Information query
IPC分类:
