Invention Grant
- Patent Title: Elastic wave element containing a silicon oxide film and a silicon nitride oxide film
- Patent Title (中): 包含氧化硅膜和氮氧化硅膜的弹性波元件
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Application No.: US12532426Application Date: 2008-05-09
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Publication No.: US07928633B2Publication Date: 2011-04-19
- Inventor: Yukio Iwasaki , Hiroki Kamiguchi , Yosuke Hamaoka
- Applicant: Yukio Iwasaki , Hiroki Kamiguchi , Yosuke Hamaoka
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: RatnerPrestia
- Priority: JP2007-138591 20070525; JP2008-082801 20080327
- International Application: PCT/JP2008/001165 WO 20080509
- International Announcement: WO2008/146449 WO 20081204
- Main IPC: H01L41/04
- IPC: H01L41/04 ; H03H9/145

Abstract:
An elastic wave element includes a piezoelectric substrate, an interdigital electrode provided on the piezoelectric substrate, a silicon oxide film covering the interdigital electrode, and a silicon nitride oxide film provided on the silicon oxide film. A film thickness H of the silicon oxide film and a wave length λ of an elastic wave propagating through the piezoelectric substrate satisfies a relation of H/λ≧0.15. The elastic wave element reduces fluctuation of propagation characteristics of elastic waves, and has high reliability.
Public/Granted literature
- US20100060101A1 ELASTIC WAVE ELEMENT Public/Granted day:2010-03-11
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