Invention Grant
- Patent Title: Low dropout voltage regulator using multi-gate transistors
- Patent Title (中): 采用多栅极晶体管的低压差稳压器
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Application No.: US12142948Application Date: 2008-06-20
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Publication No.: US07928706B2Publication Date: 2011-04-19
- Inventor: Andre Luis Do Couto , Fabio Hideki Okuyama
- Applicant: Andre Luis Do Couto , Fabio Hideki Okuyama
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: G05F1/565
- IPC: G05F1/565
Abstract:
A voltage regulator includes a first multi-gate transistor, a differential stage, a second stage having a second multi-gate transistor, and a pass transistor to apply an output voltage and output current to a device load. Based on a feedback voltage associated with the output voltage, the differential stage modulates a bias voltage applied to a control electrode of the pass transistor. A first gate of the second multi-gate transistor generates a nominal bias current for the pass transistor, and the second gate adjusts the bias voltage based on an output of the differential stage so that transients in the regulator output voltage resulting from sudden changes in current drawn by the device load are reduced.
Public/Granted literature
- US20090315526A1 VOLTAGE REGULATOR DEVICE AND METHOD THEREOF Public/Granted day:2009-12-24
Information query
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