Invention Grant
- Patent Title: Power amplifier
- Patent Title (中): 功率放大器
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Application No.: US12612755Application Date: 2009-11-05
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Publication No.: US07928804B2Publication Date: 2011-04-19
- Inventor: Kazuya Yamamoto , Satoshi Suzuki , Takao Haruna , Takao Moriwaki
- Applicant: Kazuya Yamamoto , Satoshi Suzuki , Takao Haruna , Takao Moriwaki
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Leydig, Voit & Mayer, Ltd.
- Priority: JP2009-126427 20090526
- Main IPC: H03F3/16
- IPC: H03F3/16

Abstract:
A power amplifier includes: a semiconductor substrate; a preceding-stage amplifying device on the semiconductor substrate, amplifying an input signal; a following-stage amplifying device on the semiconductor substrate, amplifying an output signal of the preceding-stage amplifying device; and an inter-stage matching circuit connecting the preceding-stage amplifying device to the following-stage amplifying device. The preceding-stage amplifying device has a first field effect transistor; the following-stage amplifying device has a heterojunction bipolar transistor; and the inter-stage matching circuit has a capacitance galvanically separating the output terminal of the preceding-stage amplifying device from the input terminal of the following-stage amplifying device.
Public/Granted literature
- US20100301944A1 POWER AMPLIFIER Public/Granted day:2010-12-02
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