Invention Grant
- Patent Title: Method for reducing lateral movement of charges and memory device thereof
- Patent Title (中): 减少电荷横向运动的方法及其记忆装置
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Application No.: US12382790Application Date: 2009-03-24
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Publication No.: US07929351B2Publication Date: 2011-04-19
- Inventor: Kwang-soo Seol , Young-gu Jin , Yoon-dong Park
- Applicant: Kwang-soo Seol , Young-gu Jin , Yoon-dong Park
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2008-0027592 20080325
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
Provided is a method and device for reducing lateral movement of charges. The method may include pre-programming at least one memory cell that is in an erased state by applying a pre-programming voltage to the at least one memory cell to have a narrower distribution of threshold voltages than the at least one erased state memory cell and verifying that the pre-programmed memory cell is in the pre-programmed state using a negative effective verifying voltage.
Public/Granted literature
- US20090244980A1 Method for reducing lateral movement of charges and memory device thereof Public/Granted day:2009-10-01
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