Invention Grant
US07929357B2 Data output buffer circuit and semiconductor memory device including the same
失效
数据输出缓冲电路和包括其的半导体存储器件
- Patent Title: Data output buffer circuit and semiconductor memory device including the same
- Patent Title (中): 数据输出缓冲电路和包括其的半导体存储器件
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Application No.: US12292736Application Date: 2008-11-25
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Publication No.: US07929357B2Publication Date: 2011-04-19
- Inventor: Young-Jin Jeon
- Applicant: Young-Jin Jeon
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2008-0000202 20080102
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
The example embodiments provide a data output buffer circuit which includes a pre-driver configured to adjust a slew rate of an input signal, a main driver configured to output signal supplied from the pre-driver, and a ZQ calibration circuit configured to control the pre-driver so as to decrease the slew rate when an operation voltage increases, and increase the slew rate when the operation voltage is decreased.
Public/Granted literature
- US20090168549A1 Data output buffer circuit and semiconductor memory device includig the same Public/Granted day:2009-07-02
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