Invention Grant
- Patent Title: Semiconductor laser diode element and method of manufacturing the same
- Patent Title (中): 半导体激光二极管元件及其制造方法
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Application No.: US12109989Application Date: 2008-04-25
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Publication No.: US07929587B2Publication Date: 2011-04-19
- Inventor: Kunio Takeuchi , Yasumitsu Kunoh , Masayuki Hata
- Applicant: Kunio Takeuchi , Yasumitsu Kunoh , Masayuki Hata
- Applicant Address: JP Osaka
- Assignee: Sanyo Electric Co., Ltd.
- Current Assignee: Sanyo Electric Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: Ditthavong Mori & Steiner, P.C.
- Priority: JP2007-118942 20070427; JP2008-106311 20080416
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
A semiconductor laser diode element includes a semiconductor laser diode portion including a ridge portion extending in a first direction in which a cavity extends, a groove formed along the ridge portion and a support portion formed along the groove on a side farther from the ridge portion and holding the groove between the support portion and the ridge portion and a support substrate bonded to the semiconductor laser diode portion through a fusion layer, wherein the fusion layer is formed so as to be embedded in the groove, a space from the ridge portion to the support substrate and a space from the support portion to the support substrate.
Public/Granted literature
- US20080267238A1 SEMICONDUCTOR LASER DIODE ELEMENT AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2008-10-30
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