Invention Grant
US07930615B2 Memory device with error correction capability and preemptive partial word write operation 有权
具有纠错能力和抢先部分字写操作的存储器件

Memory device with error correction capability and preemptive partial word write operation
Abstract:
A memory device comprises a memory array and error correction circuitry coupled to the memory array. The memory device is configured to perform a partial word write operation in which an error correction code encode process for the given retrieved word is initiated prior to completion of an error correction code decode process for the given retrieved word based on an assumption that the error correction code decode process will not indicate an error in the given retrieved word. If the error correction code decode process when completed indicates an error in the given retrieved word, the error in the given retrieved word is corrected in the error correction circuitry, and the error correction code encode process is restarted using the corrected word. The error correction code decode process and an associated correct process are thereby removed from a critical timing path of the partial word write operation.
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