Invention Grant
- Patent Title: Measurement structure in a standard cell for controlling process parameters during manufacturing of an integrated circuit
- Patent Title (中): 用于在集成电路制造期间控制工艺参数的标准单元中的测量结构
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Application No.: US12022176Application Date: 2008-01-30
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Publication No.: US07930660B2Publication Date: 2011-04-19
- Inventor: Erwin Ruderer , Walther Lutz , Roswitha Deppe
- Applicant: Erwin Ruderer , Walther Lutz , Roswitha Deppe
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
Implementations are presented herein that relate to a standard cell including a measuring structure for controlling process parameters during manufacture of an integrated circuit. A standard cell is formed in a plurality of material layers of an integrated circuit to perform part of a function of the integrated circuit, wherein the plurality of material layers is configured to be patterned by a plurality of mask layers during manufacture of the integrated circuit, wherein the standard cell includes a measuring structure that is placed within boundaries of the standard cell, wherein the measuring structure includes at least one feature in at least one of the plurality of material layers and the plurality of mask layers, wherein the at least one feature is configured to provide measurement results in order to control process parameters during manufacture of one of the material layers and mask layers.
Public/Granted literature
- US20090193367A1 Standard cell including measuring structure Public/Granted day:2009-07-30
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