Invention Grant
- Patent Title: Integrated circuit system with MOS device
- Patent Title (中): 集成电路系统与MOS器件
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Application No.: US11680568Application Date: 2007-02-28
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Publication No.: US07932103B2Publication Date: 2011-04-26
- Inventor: Niraj Subba , Jung-Suk Goo
- Applicant: Niraj Subba , Jung-Suk Goo
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Farjami & Farjami LLP
- Main IPC: G01R31/26
- IPC: G01R31/26

Abstract:
An integrated circuit system includes measuring capacitance for a base structure between a base gate and a base connector thereof, measuring capacitance for a test structure between a test gate and a test connector thereof, the test structure having the test gate, a test dielectric, and the test connector with the test dielectric extending thereunder, and determining a difference between the capacitances of the base structure and the test structure to determine parasitic capacitance for the base structure between the base gate and the base connector thereof.
Public/Granted literature
- US20080204052A1 INTEGRATED CIRCUIT SYSTEM WITH MOS DEVICE Public/Granted day:2008-08-28
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