Disclosed are layers and patterns of nanowire or nanotube using a chemical self assembly for forming a semiconductor layer and a conductive layer of a thin film transistor by using a nanowire and/or nanotube solution and an diamine-based self-assembled monolayer (SAM) material. The Layers and patterns including layers and patterns of nanowire or nanotube using a chemical self assembly include: a substrate having a surface terminated with amine group (—NH2) by using a chemical self-assembled monolayer (SAM) material having at least one end terminated with amine group (—NH2); and a first nanowire or nanotube layer ionically coupled to the amine group (—NH2) of the surface of the substrate.