Invention Grant
- Patent Title: Substrate removal process for high light extraction LEDs
- Patent Title (中): 高光提取LED的基板去除工艺
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Application No.: US11064798Application Date: 2005-02-23
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Publication No.: US07932111B2Publication Date: 2011-04-26
- Inventor: John Edmond
- Applicant: John Edmond
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Koppel, Patrick, Heybl & Dawson
- Main IPC: H01L21/8252
- IPC: H01L21/8252
Abstract:
A method for fabricating light emitting diode (LEDs) comprises providing a plurality of LEDs on a substrate wafer, each of which has an n-type and p-type layer of Group-III nitride material formed on a SiC substrate with the n-type layer sandwiched between the substrate and p-type layer. A conductive carrier is provided having a lateral surface to hold the LEDs. The LEDs are flip-chip mounted on the lateral surface of the conductive carrier. The SiC substrate is removed from the LEDs such that the n-type layer is the top-most layer. A respective contact is deposited on the n-type layer of each of the LEDs and the carrier is separated into portions such that each of the LEDs is separated from the others, with each of the LEDs mounted to a respective portion of said carrier.
Public/Granted literature
- US20060189098A1 Substrate removal process for high light extraction LEDs Public/Granted day:2006-08-24
Information query
IPC分类:
