Invention Grant
- Patent Title: Method for manufacturing light-emitting device
- Patent Title (中): 发光装置的制造方法
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Application No.: US12421280Application Date: 2009-04-09
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Publication No.: US07932112B2Publication Date: 2011-04-26
- Inventor: Kohei Yokoyama , Hisao Ikeda
- Applicant: Kohei Yokoyama , Hisao Ikeda
- Applicant Address: JP
- Assignee: Semiconductor Energy laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2008-104906 20080414
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
The deposition substrate of the present invention includes a light-transmitting substrate having a first region and a second region. In the first region, a first heat-insulating layer transmitting light is provided over the light-transmitting substrate, a light absorption layer is provided over the first heat-insulating layer, and a first organic compound-containing layer is provided over the light absorption layer. In the second region, a reflective layer is provided over the light-transmitting substrate, a second heat-insulating layer is provided over the reflective layer, and a second organic compound-containing layer is provided over the second heat-insulating layer. The edge of the second heat-insulating layer is placed inside the edge of the reflective layer, and there is a space between the first heat-insulating layer and the second heat-insulating layer.
Public/Granted literature
- US20090256169A1 Deposition Substrate and Method for Manufacturing Light-Emitting Device Public/Granted day:2009-10-15
Information query
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