Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12349026Application Date: 2009-01-06
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Publication No.: US07932126B2Publication Date: 2011-04-26
- Inventor: Junya Maruyama , Toru Takayama , Masafumi Morisue , Ryosuke Watanabe , Eiji Sugiyama , Susumu Okazaki , Kazuo Nishi , Jun Koyama , Takeshi Osada , Takanori Matsuzaki
- Applicant: Junya Maruyama , Toru Takayama , Masafumi Morisue , Ryosuke Watanabe , Eiji Sugiyama , Susumu Okazaki , Kazuo Nishi , Jun Koyama , Takeshi Osada , Takanori Matsuzaki
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2003-347646 20031006
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
The area occupied by a photo-sensor element may be reduced and multiple elements may be integrated in a limited area so that the sensor element can have higher output and smaller size. Higher output and miniaturization are achieved by uniting a sensor element using an amorphous semiconductor film (typically an amorphous silicon film) and an output amplifier circuit including a TFT with a semiconductor film having a crystal structure (typically a poly-crystalline silicon film) used as an active layer over a plastic film substrate that can resist the temperature in the process for mounting such as a solder reflow process. A sensor element that can resist bending stress can be obtained.
Public/Granted literature
- US20090117681A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2009-05-07
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