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US07932156B2 Bipolar transistor having a second, base-comprising region consisting of a first layer, a second, constrictive, layer, and a third layer 有权
具有由第一层，第二层，缩缩层和第三层组成的第二基底包含区域的双极晶体管

  • Patent Title: Bipolar transistor having a second, base-comprising region consisting of a first layer, a second, constrictive, layer, and a third layer
  • Patent Title (中): 具有由第一层，第二层，缩缩层和第三层组成的第二基底包含区域的双极晶体管
  • Application No.: US11997231
    Application Date: 2006-07-26
  • Publication No.: US07932156B2
    Publication Date: 2011-04-26
  • Inventor: Johannes J. T. M. Donkers , Wibo D. Van Noort , Francois Neuilly
  • Applicant: Johannes J. T. M. Donkers , Wibo D. Van Noort , Francois Neuilly
  • Applicant Address: NL Eindhoven
  • Assignee: NXP B.V.
  • Current Assignee: NXP B.V.
  • Current Assignee Address: NL Eindhoven
  • Priority: EP05107147 20050803
  • International Application: PCT/IB2006/052559 WO 20060726
  • International Announcement: WO2007/015194 WO 20070208
  • Main IPC: H01L21/331
  • IPC: H01L21/331
Bipolar transistor having a second, base-comprising region consisting of a first layer, a second, constrictive, layer, and a third layer
Abstract:
The invention relates to a semiconductor device (10) with a substrate (12) and a semiconductor body (11) of silicon comprising a bipolar transistor with an emitter region, a base region and a collector region (1,2,3) first conductivity type, a second conductivity type opposite to said first conductivity type and the first conductivity type, respectively, with a first semiconductor region (3) comprising the collector region or the emitter region being formed in the semiconductor body (11), on top of which a second semiconductor region (2) comprising the base region is present, on top of which a third semiconductor region (1) comprising the other of said collector region and said emitter region is present, said semiconductor body (11) being provided with a constriction at the location of the transition between the first and the second semiconductor region (3, 2), which constriction has been formed by means of an electrically insulating region (26, 27) buried in the semiconductor body (11). According to the invention a part of the semiconductor body that is formed above the buried electrically insulating region (26,27) is monocrystalline. This enables a strong lateral miniaturization of the device and results in excellent high frequency properties of the transistor. Such a device (10) is possible thanks to its manufacture with a method of manufacturing according to the invention.
Abstract(Chinese):

本发明涉及具有衬底（12）和硅的半导体本体（11）的半导体器件（10），其包括具有发射极区域，基极区域和集电极区域（1,2,3）的双极晶体管的第一导电性 类型，分别与所述第一导电类型和第一导电类型相反的第二导电类型，其中第一半导体区域（3）包括形成在半导体本体（11）中的集电极区域或发射极区域，其顶部 存在包括基极区域的第二半导体区域（2），其上存在包括所述集电极区域和所述发射极区域中的另一个的第三半导体区域（1），所述半导体本体（11）设置有收缩部 在第一和第二半导体区域（3,2）之间的过渡位置处，通过埋在半导体本体（11）中的电绝缘区域（26,27）形成该收缩 ）。 根据本发明，形成在掩埋电绝缘区域（26,27）上方的半导体本体的一部分是单晶的。 这使得器件的强大的侧向小型化并且导致晶体管的优异的高频特性。 由于通过根据本发明的制造方法的制造，这种装置（10）是可能的。

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