Invention Grant
- Patent Title: Test structure formation in semiconductor processing
- Patent Title (中): 半导体加工中测试结构的形成
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Application No.: US11772128Application Date: 2007-06-30
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Publication No.: US07932157B2Publication Date: 2011-04-26
- Inventor: Calvin K. Li , Yung-Tin Chen , En-Hsing Chen , Paul Wai Kie Poon
- Applicant: Calvin K. Li , Yung-Tin Chen , En-Hsing Chen , Paul Wai Kie Poon
- Applicant Address: US CA Milpitas
- Assignee: SanDisk Corporation
- Current Assignee: SanDisk Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Cooper Legal Group LLC
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
Test structures are formed during semiconductor processing. The test structures allow performance characteristics to be monitored as the process proceeds. The test structures are formed with a single mask that is used in a manner that also allows alignment marks to be formed which do not interfere with one another as subsequent levels are patterned. The manner of using the mask also allows different types of test structures having different features to be formed. The different types of test structures can provide insight into performance characteristics of different types of devices.
Public/Granted literature
- US20090004879A1 TEST STRUCTURE FORMATION IN SEMICONDUCTOR PROCESSING Public/Granted day:2009-01-01
Information query
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