Invention Grant
- Patent Title: Process for fabricating semiconductor device
- Patent Title (中): 半导体器件制造工艺
-
Application No.: US11292072Application Date: 2005-12-02
-
Publication No.: US07932185B2Publication Date: 2011-04-26
- Inventor: Toshio Kudo , Bunji Mizuno , Yuichiro Sasaki , Cheng-Guo Jin
- Applicant: Toshio Kudo , Bunji Mizuno , Yuichiro Sasaki , Cheng-Guo Jin
- Applicant Address: JP Tokyo JP Osaka
- Assignee: Sumitomo Heavy Industries, Ltd.,Panasonic Corporation
- Current Assignee: Sumitomo Heavy Industries, Ltd.,Panasonic Corporation
- Current Assignee Address: JP Tokyo JP Osaka
- Agency: Squire, Sanders & Dempsey (US) LLP
- Priority: JP2003-156769 20030602
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/00
Abstract:
A laser annealing process capable of suppressing a variation in sheet resistance. A surface layer formed shallower than 100 nm in a substrate of semiconductor material is added with impurities. The substrate is irradiated with a laser beam or its harmonic beam emitted from a laser diode pumped to solid-state laser to activate the impurities.
Public/Granted literature
- US20060183350A1 Process for fabricating semiconductor device Public/Granted day:2006-08-17
Information query
IPC分类:
