Invention Grant
- Patent Title: Process of forming an electronic device including a layer of discontinuous storage elements
- Patent Title (中): 形成包括不连续存储元件层的电子器件的工艺
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Application No.: US11627817Application Date: 2007-01-26
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Publication No.: US07932189B2Publication Date: 2011-04-26
- Inventor: Tushar P. Merchant , Chun-Li Liu , Ramachandran Muralidhar , Marius K. Orlowski , Rajesh A. Rao , Matthew Stoker
- Applicant: Tushar P. Merchant , Chun-Li Liu , Ramachandran Muralidhar , Marius K. Orlowski , Rajesh A. Rao , Matthew Stoker
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
An electronic device can include a layer of discontinuous storage elements. A dielectric layer overlying the discontinuous storage elements can be substantially hydrogen-free. A process of forming the electronic device can include forming a layer including silicon over the discontinuous storage elements. In one embodiment, the process includes oxidizing at least substantially all of the layer. In another embodiment, the process includes forming the layer using a substantially hydrogen-free silicon precursor material and oxidizing at least substantially all of the layer.
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