Invention Grant
- Patent Title: Precursors for CVD silicon carbo-nitride films
- Patent Title (中): CVD硅碳氮化物膜的前体
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Application No.: US12267790Application Date: 2008-11-10
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Publication No.: US07932413B2Publication Date: 2011-04-26
- Inventor: Manchao Xiao , Arthur Kenneth Hochberg
- Applicant: Manchao Xiao , Arthur Kenneth Hochberg
- Applicant Address: US PA Allentown
- Assignee: Air Products and Chemicals, Inc.
- Current Assignee: Air Products and Chemicals, Inc.
- Current Assignee Address: US PA Allentown
- Agent Rosaleen P. Morris-Oskanian
- Main IPC: C07F7/02
- IPC: C07F7/02

Abstract:
Classes of liquid aminosilanes have been found which allow for the production of silicon-containing films. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. In addition, the invention relates to a process for producing such films.The classes of compounds are generally represented by the formulas: and mixtures thereof, wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2.
Public/Granted literature
- US20090069588A1 Precursors for CVD Silicon Carbo-nitride Films Public/Granted day:2009-03-12
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