Invention Grant
- Patent Title: Perovskite transition metal oxide nonvolatile memory element
- Patent Title (中): 钙钛矿过渡金属氧化物非易失性存储元件
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Application No.: US11886776Application Date: 2006-03-23
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Publication No.: US07932505B2Publication Date: 2011-04-26
- Inventor: Akihito Sawa , Takeshi Fujii , Masashi Kawasaki , Yoshinori Tokura
- Applicant: Akihito Sawa , Takeshi Fujii , Masashi Kawasaki , Yoshinori Tokura
- Applicant Address: JP Tokyo
- Assignee: National Institute of Advanced Industrial Science and Technology
- Current Assignee: National Institute of Advanced Industrial Science and Technology
- Current Assignee Address: JP Tokyo
- Agency: Nixon & Vanderhye P.C.
- Priority: JP2005-084913 20060323
- International Application: PCT/JP2006/305775 WO 20060323
- International Announcement: WO2006/101151 WO 20060928
- Main IPC: H01L45/00
- IPC: H01L45/00

Abstract:
Provided is a material composition which allows a nonvolatile memory element made of a perovskite-type transition metal oxide having the CER effect to be formed of three elements, which comprises an electric conductor having a shallow work function or a small electronegativity, such as Ti, as an electrode and a rare earth-copper oxide comprising one type of rare earth element, copper and oxygen, such as La2CuO4, as a material constituting a heterojunction with the electric conductor.
Public/Granted literature
- US20090050868A1 Nonvolatile Memory Element Public/Granted day:2009-02-26
Information query
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