Invention Grant
US07932542B2 Method of fabricating an integrated circuit with stress enhancement
有权
制造具有应力增强的集成电路的方法
- Patent Title: Method of fabricating an integrated circuit with stress enhancement
- Patent Title (中): 制造具有应力增强的集成电路的方法
-
Application No.: US11860413Application Date: 2007-09-24
-
Publication No.: US07932542B2Publication Date: 2011-04-26
- Inventor: Joerg Berthold , Winfried Kamp , Fritz Rothacher
- Applicant: Joerg Berthold , Winfried Kamp , Fritz Rothacher
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L27/118
- IPC: H01L27/118

Abstract:
A method of fabricating an integrated circuit including arranging a plurality of cells to form a desired floor plan of the integrated circuit, wherein each cell comprises at least one transistor, forming a plurality of circuit constituents from the plurality of cells of the floor plan, wherein each circuit constituent comprises at least one cell and belongs to one of a plurality circuit constituent types, and applying mechanical stress to channel regions of the at least one transistor of each cell based on the circuit constituent type of the circuit constituent to which the cell belongs.
Public/Granted literature
- US20090079023A1 METHOD OF FABRICATING AN INTEGRATED CIRCUIT WITH STRESS ENHANCEMENT Public/Granted day:2009-03-26
Information query
IPC分类: