Invention Grant
- Patent Title: Wire structure and semiconductor device comprising the wire structure
- Patent Title (中): 线结构和包括线结构的半导体器件
-
Application No.: US12005364Application Date: 2007-12-27
-
Publication No.: US07932543B2Publication Date: 2011-04-26
- Inventor: Sang-jun Choi , Jung-hyun Lee , Hyung-jin Bae , Chang-soo Lee
- Applicant: Sang-jun Choi , Jung-hyun Lee , Hyung-jin Bae , Chang-soo Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, PLC
- Priority: KR10-2007-0003965 20070112
- Main IPC: H01L27/10
- IPC: H01L27/10
Abstract:
Provided are a wire structure and a semiconductor device having the wire structure. The wire structure includes a first wire that has a first region having a width of several to tens of nanometers and a second region having a width wider than that of the first region.
Public/Granted literature
- US20080169118A1 Wire structure and semiconductor device comprising the the wire structure Public/Granted day:2008-07-17
Information query
IPC分类:
