Invention Grant
- Patent Title: Semiconductor apparatus
- Patent Title (中): 半导体装置
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Application No.: US11683581Application Date: 2007-03-08
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Publication No.: US07932561B2Publication Date: 2011-04-26
- Inventor: Toshio Kakiuchi
- Applicant: Toshio Kakiuchi
- Applicant Address: JP Moriguchi
- Assignee: Sanyo Electric Co., Ltd.
- Current Assignee: Sanyo Electric Co., Ltd.
- Current Assignee Address: JP Moriguchi
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2006-064570 20060309
- Main IPC: H01L23/62
- IPC: H01L23/62

Abstract:
A semiconductor apparatus is equipped with an internal circuit (201) including a semiconductor element (202)(203) and a protection circuit (101) including a semiconductor (102)(103) for protecting the internal circuit (201) against damage from electrostatic discharge (ESD). The semiconductor elements (102)(103) (202)(203) constituting the internal circuit (201) and the protection circuit (101) include an impurity diffusion region (7)(8) connected by an external terminal and a guard band region (6)(5) formed near the impurity diffusion region (7)(8), respectively. A shortest distance (102L)(103L) between the impurity diffusion region (7)(8) and the guard band region (6)(5) in the semiconductor element (102)(103) of the protection circuit (101) is set to be shorter than a shortest distance (202L)(203L) between the impurity diffusion region (7)(8) and the guard band region (6)(5) in the semiconductor element (202)(203) of the internal circuit (201).
Public/Granted literature
- US20070211399A1 SEMICONDUCTOR APPARATUS Public/Granted day:2007-09-13
Information query
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