Invention Grant
- Patent Title: Magnetic element having reduced current density
- Patent Title (中): 具有降低的电流密度的磁性元件
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Application No.: US11870856Application Date: 2007-10-11
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Publication No.: US07932571B2Publication Date: 2011-04-26
- Inventor: Nicholas D. Rizzo , Phillip G. Mather
- Applicant: Nicholas D. Rizzo , Phillip G. Mather
- Applicant Address: US AZ Chandler
- Assignee: Everspin Technologies, Inc.
- Current Assignee: Everspin Technologies, Inc.
- Current Assignee Address: US AZ Chandler
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L29/82
- IPC: H01L29/82
Abstract:
A memory device includes a fixed magnetic layer, a tunnel barrier layer over the fixed magnetic layer, and a free magnetic structure formed over the tunnel barrier layer, wherein the free magnetic structure has layers or sub-layers that are weakly magnetically coupled. Thus, a low programming voltage can be used to avoid tunnel barrier breakdown, and a small pass transistor can be used to save die real estate.
Public/Granted literature
- US20090096042A1 MAGNETIC ELEMENT HAVING REDUCED CURRENT DENSITY Public/Granted day:2009-04-16
Information query
IPC分类:
