Invention Grant
US07932578B2 Semiconductor device having high frequency wiring and dummy metal layer at multilayer wiring structure
有权
具有多层布线结构的高频布线和虚设金属层的半导体装置
- Patent Title: Semiconductor device having high frequency wiring and dummy metal layer at multilayer wiring structure
- Patent Title (中): 具有多层布线结构的高频布线和虚设金属层的半导体装置
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Application No.: US12285362Application Date: 2008-10-02
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Publication No.: US07932578B2Publication Date: 2011-04-26
- Inventor: Shinichi Uchida
- Applicant: Shinichi Uchida
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2007-264766 20071010
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L21/8238
Abstract:
A semiconductor device includes, a metal wiring, which functions as an inductor or transformer, formed on a first portion of a semiconductor substrate, a plurality of first dummy layers formed in a first density on the first portion of the semiconductor substrate, a plurality of second dummy layers formed in a second density on a second portion of the semiconductor substrate, the second portion surrounding the first portion, and a plurality of third dummy layers formed in a third density higher than the first and second densities on a third portion of the semiconductor substrate, the third portion surrounding the second portion.
Public/Granted literature
- US20090096061A1 Semiconductor device having high frequency wiring and dummy metal layer at multilayer wiring structure Public/Granted day:2009-04-16
Information query
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