Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12127902Application Date: 2008-05-28
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Publication No.: US07932579B2Publication Date: 2011-04-26
- Inventor: Kouichi Nagai , Kaoru Saigoh
- Applicant: Kouichi Nagai , Kaoru Saigoh
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Fujitsu Patent Center
- Main IPC: H01L21/66
- IPC: H01L21/66
Abstract:
A semiconductor device including a capacitor formed over a semiconductor substrate and including a lower electrode, a dielectric film formed over the lower electrode and an upper electrode formed over the dielectric film, an insulation film formed over the semiconductor substrate and the capacitor, and an electrode pad formed over the insulation film and including an alloy film of aluminum and magnesium.
Public/Granted literature
- US20080258260A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2008-10-23
Information query
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